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| Advance Product Information July 22, 2004 77 GHz Transceiver Switch Key Features * * * * * * * * TGS4307-EPU I/O Compatible with MA4GC6772 3 Antenna Ports Receive, Source, and LO Ports 2.5 dB RX/TX Insertion Loss Typical 40 dB Source/Mixer Isolation Typical 25 dB Ant/Ant Isolation Typical Bias Supply: 1.3V@40mA Die Size: 1.70 x 2.16 x 0.1 mm Primary Applications * * Automotive Radar Instrumentation Product Description The TGS4307 is a 77 GHz switch matrix for use in automotive radar transceivers. The switch is designed using TriQuint's proven VPIN diode production process. Three antenna ports may be selected independently and directed to a source (J5) or a receive (J4) port. Additionally, the source port can be directed to the LO port for use with a downconverting mixer. Radar Application Schematic J2 TGS4307 B2 J1 B1 B3 J3 J4 RX Port B4 B5 J5 Source Port B4 IF J6 LO Port Measured Fixtured Data 0 -1 Insertion Loss (dB) -2 Bias: 1.3V @ 40mA 0 -10 -20 Isolation (dB) -30 -40 -50 -60 -70 -80 70 71 72 73 74 75 76 77 78 79 80 -3 -4 -5 -6 -7 -8 -9 Receive Path Transmit Path LO Path -10 Frequency (GHz) Ant / Ant Source / Ant Source / LO Source / RX 70 71 72 73 74 75 76 77 78 79 80 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipation Mounting Temperature (30 Seconds) Storage Temperature VALUE 2V -8 V 80 mA TBD 160 mW 320 C -65 to 150 0C 0 NOTES 2/ 2/ 2/, 3/ V I + PIN PD TM TSTG 1/ 2/ 3/ 2/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Control line B1, B2, B3 maximum current = 20 mA Control line B4, B5 maximum current = 40 mA TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PA R A M ET E R Frequency R ange Bias Supply Insertion Loss, Port J3 to J4 (RX) Insertion Loss, Port J1 to J5 (TX) Insertion Loss Source to LO , Port J5 to J6 (R X) Isolation Source to R X, Port J4 to J5 (R X) Isolation Source to Antenna, Port J1 to J5 (RX) Isolation Antenna to Antenna, Port J1 to J3 (RX,TX) Isolation Source to LO , Port J5 to J6 (TX) R eturn Loss TY PIC A L 75 - 80 1.3V @ 40m A 2.5 2.5 1.8 > 40 > 40 25 20 >8 U N ITS GHz dB dB dB dB dB dB dB dB Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 Preliminary Measured Data Bias: 1.3V @ 40mA TGS4307-EPU 0 -1 -2 Insertion Loss (dB) -3 -4 -5 -6 -7 -8 -9 -10 65 67 69 71 73 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Receive Path Transmit Path LO Path Transmit Path Receive Path LO Path 0 -10 -20 Isolation (dB) -30 -40 -50 -60 -70 -80 65 67 69 71 73 75 77 79 81 83 85 87 89 91 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 Source/LO Ant/Ant Source/RX Source/Ant Ant / Ant Source / Ant Source / LO Source / RX TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Preliminary Measured Data 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 65 67 69 71 73 Antenna 3 to RX Port RL @ RX Port RL @ Antenna Port Return Loss (dB) 75 77 79 81 Frequency (GHz) Source Port to Antenna 1 83 85 87 89 91 0 -2 -4 -6 -8 Return Loss (dB) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 65 67 69 71 73 RL @ Antenna Port RL @ Source Port 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Preliminary Measured Data 0 -2 -4 -6 -8 Return Loss (dB) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 65 67 69 71 73 75 77 79 81 Frequency (GHz) 83 85 87 89 91 Source Port to LO Port RL @ LO Port RL @ Source Port Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 Mechanical Drawing 0.123 (0.005) 0.880 (0.035) 1.230 (0.048) 1.638 (0.064) TGS4307-EPU 2.160 (0.085) 2.058 (0.081) 1.870 (0.074) 3 2 4 5 2.038 (0.080) 1.873 (0.074) 1.274 (0.050) 1 6 1.274 (0.050) 7 0.775 (0.031) 0.463 (0.018) 11 8 0.335 (0.013) 0.123 (0.005) 0 10 9 0.103 (0.004) 0 0.103 (0.004) 0.341 (0.013) 0.717 (0.028) 1.657 1.760 (0.065) (0.069) Units: millimeters (inches) Thickness: 0.1016 (0.004) Chip edge to bond pad dimensions are shown to center of bond pads Chip size tolerance: +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond Pad # 1 (Antenna Port 1) Bond Pad # 2 (VB1) Bond Pad # 3 (Antenna Port 2) Bond Pad # 4 (VB2) Bond Pad # 5 (VB3) Bond Pad # 6 (Antenna Port 3) Bond Pad # 7 (VB5) Bond Pad # 8 (Source Port) Bond Pad # 9 (LO Port) Bond Pad # 10 (VB4) Bond Pad # 11 (Receiver Port) 0.100 x 0.100 0.140 x 0.100 0.100 x 0.100 0.100 x 0.140 0.140 x 0.100 0.100 x 0.100 0.140 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.140 0.100 x 0.100 (0.004 x 0.004) (0.006 x 0.004) (0.004 x 0.004) (0.004 x 0.006) (0.006 x 0.004) (0.004 x 0.004) (0.006 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.006) (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Assembly Drawing External Interface (TFN) Substrate: Alumina r=9.8 Thickness=5mil Switch MMIC Substrate: GaAs r=12.9 Thickness=4mil 3 Bondwires Gap ~4mil Diameter=0.7mil Height< 1mil 5mil 3mil TFN B1 B2 B3 Microstrip Trace Width=120mm (50 ) RF I/O Pad Note: Ribbon bond is acceptable (instead of 3 bondwires) Recommended Interconnect Scheme B4 B5 Note: Unused Ports should be terminated with 50 . GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Application Schematic J2 TGS4307 B2 J1 B1 B3 J3 J4 RX Port B5 B4 J5 Source B4 Port IF J6 LO Port Bias State Table Function Transmit Receive Selected Antenna (B1, B2, or B3) -5 to 0V -5 to 0V Unused Antennas (B1, B2, or B3) +10mA each +10mA each B4 +20mA 0V B5 0V +20mA Forward voltage is ~ +1.3V to achieve bias current GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 22, 2004 TGS4307-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Wedge bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 2000C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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